Low-Field Electron Mobility in Stressed UTB SOI MOSFETs for Different Substrate Orientations
نویسندگان
چکیده
Even though it is well known that ultra-thin body (UTB) SOI MOSFETs have a better scaling potential than bulk devices, the effect of stress on UTB MOSFETs has received less attention until recently (1). In the present work the origin of the stress induced effective electron mobility enhancement ∆μeff in UTB MOSFETs on (001) and (110) wafers is investigated. Since our simulations for stressed (001) wafers match well with experimental data (1,4) we are able to predict stress effects on UTB MOSFETs on (110) substrates.
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